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High Speed IGBT with Diode
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
VCES IC25
VCE(sat)
Short Circuit SOA Capability
tfi
= 600 V = 55 A = 2.0 V = 140 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125C RG = 33 W, non repetitive TC = 25C
Maximum Ratings 600 600 20 30 55 30 110 ICM = 60 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W C C C C g g
TO-247AD (IXSH)
G
C
E
TO-268 (D3) (IXST)
G E C
TO-264 (IXSK)
G
C
E C = Collector TAB = Collector
G = Gate E = Emitter
Mounting torque
1.13/10 Nm/lb.in. 300 TO-247/TO-268 TO-264 6/4 10
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight
Features * International standard packages: JEDEC TO-247, TO-264& TO-268 * Short Circuit SOA capability * Medium freqeuncy IGBT and antiparallel FRED in one package * New generation HDMOSTM process Applications * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode power supplies Advantages * Space savings (two devices in one package) * Easy to mount with 1 screw (isolated mounting screw hole) * Surface mountable, high power case style * Reduces assembly time and cost * High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 125C 7 200 3 100 IC = IC90 IC = IC25 2.0 2.7 V V mA mA nA V V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 750 mA, VGE = 0 V = 2.5 mA, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98517A (7/00)
(c) 2000 IXYS All rights reserved
1-5
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10 3100 240 30 100 30 38 30 30 150 140 1.5 30 35 0.5 270 250 2.5 TO-247 TO-264 0.25 0.15 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.62 K/W K/W K/W
TO-247 AD (IXSH) Outline
gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90; VGE = 15 V VCE = 0.8 VCES; RG = 4.7 W Note 1. Inductive load, TJ = 125C IC = IC90; VGE = 15 V VCE = 0.8 VCES; RG = 4.7 W Note 1
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8
Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
270 270 2.5
1.5 2.49
TO-264 AA (IXSK) Outline
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions IF = IC90, VGE = 0 V Note 2
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 150 C TJ = 25 C 2 35 1.7 2.5 2.5 50 V V A ns
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
IF = 50A; VGE = 0 V; TJ = 100 C VR = 100 V; -diF/dt = 100 A/ms IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25C
.09 K/W
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG. 2. Pulse test, t 300 ms, duty cycle d 2 %
TO-268AA (IXST) (D3 PAK)
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
Min. Recommended Footprint
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-5
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
Fig.1 Saturation Characteristics
100
TJ = 25C
Fig.2 Output Characterstics
200
TJ = 25C VGE = 15V
VGE = 15V
13V
11V 13V
80
160
IC - Amperes
IC - Amperes
11V
9V
60 40
9V
120 80
7V
20
7V
40
5V
0 0 1 2 3 4 5
0
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
120
TJ = 125C VGS=15V 13V
Fig.4 Temperature Dependence of Output Saturation Voltage
1.6
VGE = 15V IC = 60A
80 60 40 20
11V
VCE (sat) - Normalized
100
1.4 1.2
IC = 30A
IC - Amperes
1.0
IC = 15A
9V
0.8 0.6
7V
0 0 2 4 6 8 10
25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig.5 Input Admittance
Fig.6 Temperature Dependence of Breakdown and Threshold Voltage
10000
f = 1Mhz
140 120
VCE = 10V
Capacitance - pF
IC - Amperes
100 80 60 40 20 0 4 6 8 10 12 14 16
TJ = 125C TJ = 25C
1000
Ciss
100
Coss
Crss
10 0 5 10 15 20 25 30 35 40
VGE - Volts
VCE-Volts
(c) 2000 IXYS All rights reserved
3-5
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current
Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG
7.5
2.0
TJ = 125C E(OFF) IC = 60A
1.5
TJ = 125C
8
RG = 10
E(OFF) - milliJoules
E(ON) - millijoules
E(ON) - millijoules
1.5
1.0
E(ON)
5.0
E(OFF)
E(ON)
6
E(OFF) - millijoules
1.0
IC = 30A E(ON) E(OFF)
4
0.5
2.5
0.5
E(ON) IC = 15A E(OFF)
2
0.0
0 20 40 60
0.0 80
0.0
0
0
10
20
30
40
50
IC - Amperes
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15 12
IC =30A VCE = 300V
Fig.10 Turn-Off Safe Operating Area
100
IC - Amperes
VGE - Volts
10
TJ = 125C
9 6 3 0 0 25 50 75 100 125
RG = 4.7 dV/dt < 5V/ns
1
0.1 0 100 200 300 400 500 600
Qg - nanocoulombs
VCE - Volts
Fig.11 Transient Thermal Resistance
1
D=0.5 D=0.2
ZthJC (K/W)
0.1 D=0.1
D=0.05 D=0.02 D=0.01 Single pulse
0.01
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
(c) 2000 IXYS All rights reserved
4-5
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
60 A 50 IF 40
1000 nC 800 Qr
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
IRM
30 A 25 20 15
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
TVJ=150C
30
600
TVJ=100C
20
400 10
TVJ=25C
10 0 0 1 2 VF 3V 200 5 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt
0 100
Fig. 12 Forward current IF versus VF
Fig. 13 Reverse recovery charge Qr versus -diF/dt
90 ns
Fig. 14 Peak reverse current IRM versus -diF/dt
20
2.0
TVJ= 100C VR = 300V
TVJ= 100C V IF = 30A V FR tfr
1.00 s tfr 0.75
1.5 Kf 1.0
trr 80
VFR 15
I RM
70 0.5
IF= 60A IF= 30A IF= 15A
10
0.50
5
0.25
Qr
0.0 0 40 80 120 C 160 TVJ
60 0 200 400 600 -diF/dt 800 A/ms 1000
0 0 200 400
0.00 600 A/ms 1000 800 diF/dt
Fig. 15 Dynamic parameters Qr, IRM versus TVJ
1 K/W
Fig. 16 Recovery time trr versus -diF/dt
Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.0052 0.0003 0.0162
0.1 ZthJC
1 2 3
0.01
0.001 0.00001
DSEP 29-06
0.0001
0.001
0.01
0.1 t
s
1
Fig. 18 Transient thermal resistance junction to case
(c) 2000 IXYS All rights reserved
5-5

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